Raman scattering and photoluminescence of ZnSxTe1−x mixed crystals
نویسندگان
چکیده
We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1−x mixed crystals grown by MBE, covering the entire composition range (0 6 x < 1). The results of Raman studies show that the ZnSxTe1−x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the temperature dependence of the photoluminescence of ZnSxTe1−x have been employed to find out the origin of PL emissions in ZnSxTe1−x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).
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